| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that reduces occupation area of a memory cell without slowing down writing operation for data to the memory cell.SOLUTION: The semiconductor device includes a second diffusion layer 41 formed on the side of an upper surface 71f of a channel region 71 while extending in an X direction, a first gate electrode 75 formed on the third side surface 71a of the channel region 71 with a gate insulating film 73 interposed, a second gate electrode 76 formed on the fourth side surface 71b of the channel region 71 with the gate insulating film 73 interposed, a first memory cell 23-1 provided on the second diffusion layer 41 while being matched with the first part 71-1 of the channel region 71, and a second memory cell 23-2 provided on the second diffusion layer 41 while being matched with the second part 71-2 of the channel region 71. |
