发明名称 |
Methods Of Forming A Conductive Transparent Oxide Film Layer For Use In A Cadmium Telluride Based Thin Film Photovoltaic Device |
摘要 |
Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 10° C. to about 100° C. A cap layer including cadmium sulfide can be deposited directly on the transparent conductive oxide layer. The transparent conductive oxide layer can be annealed at an anneal temperature from about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. An intermediate substrate is also generally provided for use to manufacture a thin film photovoltaic device.
|
申请公布号 |
US2011244251(A1) |
申请公布日期 |
2011.10.06 |
申请号 |
US20100750056 |
申请日期 |
2010.03.30 |
申请人 |
PRIMESTAR SOLAR, INC. |
发明人 |
FELDMAN-PEABODY SCOTT DANIEL;DRAYTON JENNIFER ANN;GOSSMAN ROBERT DWAYNE;SADEGHI MEHRAN |
分类号 |
B32B17/06;C23C14/34;H01L31/18 |
主分类号 |
B32B17/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|