发明名称 PROCESS FOR PRODUCTION OF OPTICAL VANADIUM DIOXIDE THIN FILM
摘要 <p>Disclosed is a process for producing a thin film which contains vanadium dioxide as the main component and of which infrared ray transmissibility can be adjusted automatically in accordance with temperatures, in a simple manner even in the atmosphere at room temperature. The process is characterized in that a thin film comprising a precursor containing vanadium atoms is formed on a glass substrate and the thin film is irradiated with light such as a laser beam having a wavelength of 400 nm or less, thereby producing a thin film which contains vanadium dioxide as the main component and of which the infrared ray transmissibility can be adjusted automatically in accordance with temperatures without requiring the control of the gas atmosphere.</p>
申请公布号 WO2011118700(A1) 申请公布日期 2011.09.29
申请号 WO2011JP57158 申请日期 2011.03.24
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY;TSUCHIYA TETSUO;NISHIKAWA MASAMI;NAKAJIMA TOMOHIKO;KUMAGAI TOSHIYA;MANABE TAKAAKI 发明人 TSUCHIYA TETSUO;NISHIKAWA MASAMI;NAKAJIMA TOMOHIKO;KUMAGAI TOSHIYA;MANABE TAKAAKI
分类号 C23C18/14;C03C17/34;G01J1/02 主分类号 C23C18/14
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