BIDIRECTIONAL SWITCH ELEMENT AND BIDIRECTIONAL SWITCH CIRCUIT USING SAME

摘要

Disclosed is bidirectional switch element comprising a semiconductor layer laminate (203) comprised of a nitride semiconductor; a first ohmic electrode (211) and a second ohmic electrode (212) which are formed on the semiconductor layer laminate (203); a first gate electrode (217); and a second gate electrode (218). The first gate electrode (217) is covered by a first shield electrode (221), which has substantially the same potential as the first ohmic electrode (211). The second gate electrode (218) is covered by a second shield electrode (222), which has substantially the same potential as the second ohmic electrode (212). The end of the first shield electrode (221) is positioned closer to the second gate electrode (218) than to the first gate electrode (217) and the end of the second shield electrode (222) is positioned closer to the first gate electrode (217) than to the second gate electrode (218).