MAGNETIC DEVICE WITH MAGNETIC TUNNEL JUNCTION, MEMORY ARRAY, AND READING/WRITING METHOD USING SAME

摘要

PROBLEM TO BE SOLVED: To provide a magnetic tunnel junction magnetic device, a memory, and a writing/reading method using the device.

SOLUTION: The device (16) comprises a reference layer (20c) and a storage layer (20a) separated by a semiconductor or insulating layer (20b). The blocking temperature of the magnetization of the storage layer is lower than that of the reference layer. The device further comprises means (22, 24) for heating the storage layer beyond the blocking temperature of magnetization and a means (26) for applying thereto a magnetic field (34) orientating the magnetization with respect to that of the reference layer without modifying the orientation of the reference layer.

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