发明名称 |
ELECTRONIC DEVICE WAFER LEVEL SCALE PACKAGES AND FABRICATION METHODS THEREOF |
摘要 |
Electronic device wafer level scale packages and fabrication methods thereof A semiconductor wafer with a plurality of electronic devices formed thereon is provided. The semiconductor wafer is bonded with a supporting substrate. The back of the semiconductor substrate is thinned. A first trench is formed by etching the semiconductor exposing an inter-layered dielectric layer. An insulating layer is conformably deposited on the back of the semiconductor substrate. The insulating layer on the bottom of the first trench is removed to create a second trench. The insulating layer and the ILD layer are sequentially removed exposing part of a pair of contact pads. A conductive layer is conformably formed on the back of the semiconductor. After the conductive layer is patterned, the conductive layer and the contact pads construct an S-shaped connection. Next, an exterior connection and terminal contact pads are subsequently formed.
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申请公布号 |
US2011237018(A1) |
申请公布日期 |
2011.09.29 |
申请号 |
US201113152891 |
申请日期 |
2011.06.03 |
申请人 |
LIU CHIEN-HUNG;LEE SIH-DIAN |
发明人 |
LIU CHIEN-HUNG;LEE SIH-DIAN |
分类号 |
H01L31/02;H01L21/18;H01L21/78 |
主分类号 |
H01L31/02 |
代理机构 |
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代理人 |
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地址 |
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