发明名称 NONVOLATILE STORAGE DEVICE, INTEGRATED CIRCUIT DEVICE AND ELECTRONIC EQUIPMENT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile storage device etc. allowing first and second modes to be optionally switched. <P>SOLUTION: A first and a second memory cells MC1, MC2 store separate data on the first mode and complementary data on the second mode. On the first mode, a readout circuit RC reads out storage data of a first memory cell MC1 by comparing a detection current flowing into the first memory cell MC1 from a differential signal amplifier section CM1 and a reference current flowing into a second reference current source IS2, and reads out storage data of a second memory cell MD1 by comparing a detection current flowing into the second memory cell MD1 from the differential signal amplifier section CM1 and a reference current flowing into a first reference current source IS1. On the second mode, readout circuit RC reads out the complementary data of the first and second memory cells MC1, MD1 by comparing the detection current flowing into the first memory cell MC1 from the differential signal amplifier section CM1 and the detection current flowing into the second memory cell MD1. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011192329(A) 申请公布日期 2011.09.29
申请号 JP20100055684 申请日期 2010.03.12
申请人 SEIKO EPSON CORP 发明人 TOKUDA YASUNOBU;SHODA MAKI;KOBAYASHI HITOSHI
分类号 G11C16/02 主分类号 G11C16/02
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