发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which minimizes the replacement volume of a process gas supply pipeline, and to improve the speed of switching process gases supplied to a reaction chamber. SOLUTION: The substrate processing apparatus includes a processing chamber 52, housing a substrate; a plurality of processing gas supply means which supply a plurality of process gases into the processing chamber; a carrier gas supply means which supplies a carrier gas into the processing chamber; an exhaust means which exhausts the processing chamber of an atmosphere gas; and a control means which controls the plurality of process gas supply means, carrier gas supply means and exhaust means. The plurality of process gas supply means have upstream-side valves 56 and 63, flow control means 57, 58, and 64, downstream-side first valves 59 and 65, and downstream-side second valves 62 and 67 that are provided in increasing order on process gas pipelines from their upstream side. The carrier gas supply means are each connected between the downstream-side second valves 62 and 67 and the processing chamber 52, on the downstream side of valves 79 and 83 are provided on carrier gas pipelines. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011187485(A) 申请公布日期 2011.09.22
申请号 JP20100048076 申请日期 2010.03.04
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 KONYA TADASHI;OKUDA KAZUYUKI;SAKAI MASANORI;SATO TAKETOSHI
分类号 H01L21/31 主分类号 H01L21/31
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