| 摘要 |
PROBLEM TO BE SOLVED: To provide a spin transistor for maintaining rotation control properties of a spin, and preventing the leakage current, even in the spin transistor with a short gate length. SOLUTION: The spin transistor has a source and a drain consisting of ferromagnetic material, a semiconductor layer connected directly or through a tunnel insulation layer to the source and the drain, and a plurality of gate electrodes which are prepared directly or through a gate insulator layer on the semiconductor layer, and controls independently the potential of the semiconductor layer oppositely. COPYRIGHT: (C)2011,JPO&INPIT
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