发明名称 Bootstrap circuit for H-bridge structure utilizing N-channel high-side fets
摘要 The invention relates to an apparatus and method for driving high-side switching devices in an H-Bridge circuit. The apparatus includes first and second N-Channel high-side switching devices. Each of the high-side switching devices is associated with, and is selectively driven by, a driver circuit. Each of the driver circuits is associated with, and is powered from, a bootstrap capacitor. The apparatus further includes a cross-couple circuit that is arranged to charge each of the bootstrap capacitors based, at least in part, on whether the low-side switching device that is associated with the other bootstrap capacitor is open or closed.
申请公布号 US8022746(B1) 申请公布日期 2011.09.20
申请号 US20080027781 申请日期 2008.02.07
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 SIGNORETTI BARRY;ANDERSON DAVID I.;ZHANG JIANHUI
分类号 H03K3/00 主分类号 H03K3/00
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