| 摘要 |
A method for eliminating precipitates contained in an II-VI solid semiconductor material, in which the solid semiconductor material is a congruent sublimation solid semiconductor material, the method including: providing an inert gas flow; heating the solid semiconductor material under the inert gas flow up to a temperature T, between a first temperature T1, corresponding to compound II-VI/element VI eutectic, and a second temperature T2, corresponding to maximum congruent sublimation temperature; maintaining the solid semiconductor material at this temperature T under a neutral gas flow for a time period sufficient to eliminate the precipitates; cooling the solid semiconductor material under the inert gas flow from temperature T to ambient temperature, at a rate such that, during the cooling, the solid semiconductor material merges with its congruent sublimation line; and recovering a precipitate-free solid semiconductor material.
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