发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A semiconductor device includes a wiring embedded in an insulating layer, an oxide semiconductor layer over the insulating layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate electrode provided to overlap with the oxide semiconductor layer, and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode. The insulating layer is formed so that part of a top surface of the wiring is exposed. The part of the top surface of the wiring is positioned higher than part of a surface of the insulating layer. The wiring in a region exposed from the insulating layer is electrically connected to the source electrode or the drain electrode. The root-mean-square roughness of a region which is part of the surface of the insulating layer and in contact with the oxide semiconductor layer is 1 nm or less. |
申请公布号 |
WO2011111507(A1) |
申请公布日期 |
2011.09.15 |
申请号 |
WO2011JP53616 |
申请日期 |
2011.02.15 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;FUJII, TERUYUKI;IMAHAYASHI, RYOTA |
发明人 |
FUJII, TERUYUKI;IMAHAYASHI, RYOTA |
分类号 |
H01L29/786;G11C11/401;H01L21/336;H01L21/768;H01L21/8242;H01L21/8247;H01L27/10;H01L27/108;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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