| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-resistance photoconductive element. <P>SOLUTION: The photoconductive element includes a photoconductive layer (2), made of a semiconductor material for generating a photoexcited carrier by having it irradiated with excitation light (4); and a plurality of electrodes (3) disposed on the photoconductive layer (2). The photoconductive layer (2) is made of a material, where the thickness of a depletion layer (6), generated in the photoconductive layer, is smaller than the optical absorption length of the photoconductive layer (2) at the wavelength of the excitation light (4). The film thickness of the photoconductive layer (2) is adjusted so that the depletion layer (6) reaches the entirety in the film thickness direction, at least at a portion among the plurality of electrodes (3) in the photoconductive layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
