发明名称 CUSTOMIZED METALLIZATION PATTERNS DURING FABRICATION OF SEMICONDUCTOR DEVICES
摘要 <p>Embodiments of the invention are directed to a system and method of depositing material on a polycrystalline semiconductor substrate. The method may comprise detecting characteristics of polycrystalline semiconductor substrate, generating image data of a customized pattern of lines based on the characteristics of the substrate and depositing material from one or more nozzles on the substrate according to the image data of the customized pattern. The characteristics may include grain boundaries of the substrate and spatial variations in sheet resistance and/or the minority carrier lifetime of the substrate.</p>
申请公布号 KR20110101195(A) 申请公布日期 2011.09.15
申请号 KR20117015855 申请日期 2009.12.10
申请人 XJET LTD. 发明人 DOVRAT MICHAEL
分类号 H01L31/18;H01L31/0224;H01L31/042 主分类号 H01L31/18
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