| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve such a problem that, when measuring a variety of characteristics by manufacturing an in-trench double-gate p-channel power MOSFET having a p+ polysilicon gate electrode and a p+ field plate electrode in a trench following a design technique, an absolute value of a threshold voltage of the p-channel power MOSFET is gradually increased accompanied by the lapse of a stress application time when continuously applying a negative bias to a gate with respect to a main board in a high-temperature state. <P>SOLUTION: This p-channel power MOSFET includes an n-type polysilicon linear field plate electrode and an n-type polysilicon linear gate electrode in each trench thereof. <P>COPYRIGHT: (C)2011,JPO&INPIT |
