发明名称 METHOD AND APPARATUS FOR PRODUCING NITRIDE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To improve the quality of the crystal in a method and an apparatus for producing a nitride crystal. SOLUTION: The method for producing a nitride crystal includes a preparation step and a subsequent step of growing the crystal. The preparation step includes a first step of housing a seed substrate, metallic gallium and sodium, which are crystal raw materials, in a crucible. The step of growing the crystal includes a second step of growing the crystal on the seed substrate in such a state that the crucible is arranged in a crystal growth vessel, and the furnace core tube is heated at a predetermined temperature by a heating means while the crystal growth vessel is disposed in the furnace core tube, and the crucible is placed under a nitrogen atmosphere at a predetermined air pressure by a raw material gas supply means. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011178626(A) 申请公布日期 2011.09.15
申请号 JP20100045433 申请日期 2010.03.02
申请人 PANASONIC CORP 发明人 YAMAMOTO TAKEKATSU;MINEMOTO TAKASHI;HATAYAMA TAKESHI;YAMAZAKI DAIZO
分类号 C30B29/38;C30B19/02 主分类号 C30B29/38
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