发明名称 |
Scaling of bipolar transistors |
摘要 |
Bipolar transistor structures, methods of designing and fabricating bipolar transistors, methods of designing circuits having bipolar transistors. The method of designing the bipolar transistor includes: selecting an initial design of a bipolar transistor; scaling the initial design of the bipolar transistor to generate a scaled design of the bipolar transistor; determining if stress compensation of the scaled design of the bipolar transistor is required based on dimensions of an emitter of the bipolar transistor after the scaling; and if stress compensation of the scaled design of the bipolar transistor is required then adjusting a layout of a trench isolation layout level of the scaled design relative to a layout of an emitter layout level of the scaled design to generate a stress compensated scaled design of the bipolar transistor.
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申请公布号 |
US8020128(B2) |
申请公布日期 |
2011.09.13 |
申请号 |
US20090493383 |
申请日期 |
2009.06.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JOSEPH ALVIN JOSE;MALLADI RAMANA MURTY;SLINKMAN JAMES ALBERT |
分类号 |
G06F17/50;G06F9/455 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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