发明名称 Dual sided processing and devices based on freestanding nitride and zinc oxide films
摘要 Thin freestanding nitride films are used as a growth substrate to enhance the optical, electrical, mechanical and mobility of nitride based devices and to enable the use of thick transparent conductive oxides. Optoelectronic devices such as LEDs, laser diodes, solar cells, biomedical devices, thermoelectrics, and other optoelectronic devices may be fabricated on the freestanding nitride films. The refractive index of the freestanding nitride films can be controlled via alloy composition. Light guiding or light extraction optical elements may be formed based on freestanding nitride films with or without layers. Dual sided processing is enabled by use of these freestanding nitride films. This enables more efficient output for light emitting devices and more efficient energy conversion for solar cells.
申请公布号 US8017415(B2) 申请公布日期 2011.09.13
申请号 US20090590196 申请日期 2009.11.04
申请人 GOLDENEYE, INC. 发明人 ZIMMERMAN SCOTT M.;BEESON KARL W.;LIVESAY WILLIAM R.
分类号 H01L21/00 主分类号 H01L21/00
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