| 摘要 |
FIELD: chemistry. ^ SUBSTANCE: invention can be used in production of polycrystalline silicon used in microelectronics. During production thereof, a stream of exhaust gas from one or more Siemens is fed into one or more fluidised-bed reactors. The stream of exhaust gas from multiple Siemens reactors can be fed directly into one or more fluidised-bed reactors without intermediate processing steps. The stream of exhaust gas contains trichloromethane, silicon tetrachloride, hydrogen, hydrogen chloride and silicon powder. The silicon powder can be removed from the stream of exhaust gas before feeding into the fluidised-bed reactor. ^ EFFECT: invention makes heating easy when producing polycrystalline silicon and reduces the amount of by-products. ^ 14 cl, 2 dwg |
