| 摘要 |
The disclosed method for producing an SOI wafer-which is used in a device fabrication step or inspection step having a step for radiating light of wavelength ? onto the SOI wafer wherein an SOI layer has been formed on a buried insulator layer and that performs position control of the SOI wafer on the basis of the strength of light reflected from the SOI wafer-has at least: a step for designing the thickness of the buried insulator layer of the SOI wafer in accordance with the wavelength (?) of light used in the step for performing position control of the SOI wafer after production; and a step for fabricating the SOI wafer wherein an SOI layer has been formed on the buried insulator layer of the designed thickness. As a result, a method for producing and a method for designing and SOI wafer are provided that can suppress variations in reflectance of light that accompany variations in SOI-layer thickness, increasing the accuracy of position control of the SOI wafer, and that can have a shared mechanism with that for position control used in a device fabrication step or inspection step of a bulk silicon wafer, reducing costs. |
