| 摘要 |
<p>Disclosed is a semiconductor device wherein, with respect to the end portions of gate patterns (21, 22) disposed parallel to each other, and the facing end portions of the gate patterns (23, 24) disposed parallel to each other, the end portion of the gate pattern (21) protrudes more toward the gate patterns (23, 24) compared with the end portion of the gate pattern (22), and the facing end portion of the gate pattern (24) protrudes more toward the gate patterns (21, 22) compared with the facing end portion of the gate pattern (23). The correction quantity of the end portion of the receded gate pattern (22) and that of the facing end portion of the receded gate pattern (23) can be set large to such an extent that further recession is not generated in the finished shape.</p> |
