| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film circuit structure in which the space for the circuit structure is reduced and pixels are made fine, and to provide a method of manufacturing the thin film circuit structure. <P>SOLUTION: A thin film circuit device 12 has two or more adjacent thin film transistors 10A and 10B composed of at least gate electrodes 2, a gate insulating film 3, oxide semiconductor films 4, source electrodes 5s, and drain electrodes 5d in an in-plane direction X on a base 1. The two or more thin film transistors 10A and 10B have the common gate insulating film 3; and the first thin film transistor 10A is provided with the first oxide semiconductor film 4A under the gate insulating film 3 and the second thin film transistor 10B is provided with the second oxide semiconductor film 4B on the gate insulating film 3. <P>COPYRIGHT: (C)2011,JPO&INPIT |
