| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a novel film for producing semiconductor devices, even when a semiconductor wafer is thin, excellent in preventing contamination of a semiconductor chip having an excellent balance of holding power during dicing the thin semiconductor wafer, peeling property when peeling the semiconductor chip obtained by dicing together with the adhesive layer thereof and low contamination property without attaching cutting debris to the semiconductor chip. <P>SOLUTION: The film for producing semiconductor devices is used in producing the semiconductor devices and comprises a base layer, a first adhesive layer provided on the base layer, a radiation-curing type second adhesive layer provided on the first adhesive layer and cured by radiation irradiation in advance and an adhesive layer provided on the second adhesive layer. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
