发明名称 |
PHOTODIODE, OPTICAL COMMUNICATION DEVICE, AND OPTICAL INTERCONNECTION MODULE |
摘要 |
Intended is to provide a device structure, which makes the light receiving sensitivity and the high speediness of a photodiode compatible. Also provided is a Schottky barrier type photodiode having a conductive layer formed on the surface of a semiconductor layer. The photodiode is so constituted that a light can be incident on the back side of the semiconductor layer, and that a periodic structure, in which a light incident from the back side of the semiconductor layer causes a surface plasmon resonance, is made around the Schottky junction of the photodiode. |
申请公布号 |
EP2110864(A4) |
申请公布日期 |
2011.09.07 |
申请号 |
EP20070832626 |
申请日期 |
2007.11.28 |
申请人 |
NEC CORPORATION |
发明人 |
FUJIKATA, JUNICHI;OKAMOTO, DAISUKE;MAKITA, KIKUO;NISHI, KENICHI;OHASHI, KEISHI |
分类号 |
H01L31/108;G02B6/122;H01L31/0224;H01L31/105 |
主分类号 |
H01L31/108 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|