| 摘要 |
A vapor deposition process for the preparation of a chemical compound, wherein the process comprises providing each component element of the chemical compound as a vapor, and co-depositing the component element vapors on a common substrate, wherein: the vapor of at least one component element is provided using a cracking source; the vapor of at least one other component element is provided using a plasma source; and at least one further component element vapor is provided; wherein the component elements react on the substrate to form the chemical compound. |
