发明名称 |
Memory devices including floating body transistor capacitorless memory cells and related methods |
摘要 |
A semiconductor memory device includes a memory cell array which includes a plurality of unit memory cells, where each of the unit memory cells comprises complementary first and second floating body transistor capacitor-less memory cells. A logic value written into and read from each unit memory cell is defined by a difference in threshold voltage states of the first and second floating body transistor capacitorless memory cells.
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申请公布号 |
US8014221(B2) |
申请公布日期 |
2011.09.06 |
申请号 |
US20060546403 |
申请日期 |
2006.10.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE YEONG-TAEK |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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