| 摘要 |
824,265. Semi-conductor devices. SIEMENS & HALSKE A.G. Dec. 16, 1955 [Dec. 16, 1954; June 24, 1955; Nov. 15, 1955; Nov. 28, 1955], No. 36207/55. Class 37. A housing containing an electrical component which generates heat has one wall composed of two electrically conductive layers separated by an insulating layer the inner layer being in good thermal and electrical contact with the component. In Fig. 3, the collector electrode of a PNP transistor 1 is soldered to a metal plate 2 which is separated by insulating layer 8 from a metal plate 9 which is mounted in good thermal contact with a heat sink, such as a chassis member, by means of screwed rod 10. Plates 2 and 9 and the layer 8 may be stuck together, or may be secured by clips 11. Fig. 4 shows an alternative arrangement in which collector electrode 15 of a junction transistor 12 is soldered to metal plate 16. Plate 16 and member 17 are secured together by means of pot-shaped member 19 and insulating layer 18, the whole being sunk into a heat-absorbing member 20. The insulating layer may consist of a synthetic resin such as " Araldite " (Registered Trade Mark) with quartz or ceramic powder of uniform grain size incorporated. Other insulating materials such as vinyl carbazole, monostyrene or polystyrene with hardening additions, polyether acetates, unsaturated polyester resins (e.g. " heguval "), polyethylene, fluorocarbons (e.g. polychlorotrifluorethylene) may be used. A plasticizing substance may be added. Aluminium oxide and/or magnesium oxide and/or silicon carbide may be used instead of quartz. A monocrystal of intrinsic semi-conductor or oxidic insulator such as quartz, aluminium oxide or magnesium oxide, may be used. The transistor material may be germanium with alloy junction electrodes of indium. Specification 806,697 is referred to. |
