| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem caused by an impurity as a contaminant adhered to the surface of a substrate formed of InP in a state that he desired characteristics can be obtained. SOLUTION: First, a semiconductor layer (a first semiconductor layer) 102 including carbon (C)-added GaAsSb is formed on a substrate 101 including ferrite (Fe)-added semi-insulated InP. The semiconductor layer 102 is formed as the p-type one with the addition of carbon (C). Moreover, carbon (C) to be added becomes an impurity having an electrical characteristic reverse to that of the impurity adhered to the front surface of the substrate 101. The semiconductor layer 102 may be sufficed by being constituted of a compound semiconductor including at least one of In and Ga, and at least As and Sb such as Al<SB>z</SB>In<SB>x</SB>Ga<SB>1-x-z</SB>As<SB>1-y</SB>Sb<SB>y</SB>(where 0≤x≤0.2, 0.3≤y≤1, 0≤z≤1, 0≤x+z≤1). COPYRIGHT: (C)2011,JPO&INPIT
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