| 摘要 |
PROBLEM TO BE SOLVED: To calculate the electrical characteristics of a short channel transistor in consideration of the speed overshoot effect with high accuracy and also numerically in a stable manner. SOLUTION: The device simulation apparatus includes a device property calculation part for calculating the current density and the electrostatic potential of the carrier based on a drift diffusion model and the Poisson's equation; a temperature calculation part for substituting the current density and the electrostatic potential for an equation integrating that which neglects a diffusion term by heat conduction in energy preservation formula of the carrier and also sets the current density constant in a direction perpendicular to a channel to calculate local carrier temperature; a mobility calculation part for substituting carrier temperature for a predetermined mobility model to calculate local carrier mobility; and a diffusion constant calculation part for substituting the carrier mobility for Einstein's relational expression, to calculate local carrier diffusion constants. COPYRIGHT: (C)2011,JPO&INPIT
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