| 摘要 |
A plasma processing apparatus performs a specific plasma processing on a target substrate by disposing a first and a second electrode to face each other in a processing chamber, and supplying high-frequency electric power to at least one of the first and the second electrodes to thereby generate a plasma while introducing a processing gas onto the target substrate supported by the second electrode. The electrode for use as the first electrode includes: an electrode plate facing the second electrode; a support for supporting the electrode plate, wherein the support is in contact with a surface of the electrode plate and the surface is opposite to the second electrode; and a dielectric portion, provided on a contact surface of the support with the electrode plate, and having a shape in which a center portion thereof has a height different from that of an edge portion thereof.
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