| 摘要 |
A method of fabricating a semiconductor device is provided in which the channel of the device is present in an extremely thin semiconductor-on-insulator (ETSOI) layer, i.e., a semiconductor layer having a thickness of less than 20 nm. In one embodiment, the method begins with forming a first semiconductor layer and epitaxially growing a second semiconductor layer on a handling substrate. A first gate structure is formed on a first surface of the second semiconductor layer and source regions and drain regions are formed adjacent to the gate structure. The handling substrate and the first semiconductor layer are removed to expose a second surface of the second semiconductor layer that is opposite the first surface of the semiconductor layer. A second gate structure or a dielectric region is formed in contact with the second surface of the second semiconductor layer.
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