Semiconductor device including a MOSFET and a Schottky junction

摘要

A semiconductor device, including a MOSFET, has a plurality of transistor cell regions disposed in a semiconductor substrate. A source electrode of the MOSFET is disposed over a main surface of the semiconductor substrate and is in contact with a top surface of a source region in each of the plurality of transistor cell regions. A drain electrode of the MOSFET is a disposed over a back surface of the semiconductor substrate and is electrically connected to the semiconductor substrate. A Schottky cell region is disposed between the plurality of transistor cell regions in the semiconductor substrate. The source electrode is in contact with a part of the main surface of the semiconductor so as to form a Schottky junction in the Schottky cell region.