| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device by preventing occurrence of a short circuit between leads caused by separation of a residual resin formed on a side face of the lead or a lower side of the lead. <P>SOLUTION: By irradiating an intra-dam resin formed in a dam portion 12a surrounded by leads 3 adjacent to each other, a dam bar 12 and a sealing body 2 with a laser beam a plurality of times respectively from a principal surface side of the lead 3 and the back face side of the lead 3, the intra-dam resin formed on the side faces of the lead 3 or the lower part of the lead 3 is completely removed. <P>COPYRIGHT: (C)2011,JPO&INPIT |
