| 摘要 |
The present invention is to reduce the variation in axis of easy magnetization of a magnetic thin film with respect to a large diameter substrate. A plasma processing apparatus (1) includes: a substrate holder (11) that supports a substrate (10); a magnet holder (31) that is provided around the substrate holder and supports a magnet (30); a cathode unit (50) that is provided above the substrate, and applied with a discharge voltage; a rotating mechanism (20, 40) that is capable of rotating one or both of the substrate holder and the magnet holder along the planar direction of the process surface of the substrate; a rotational position sensor (25, 45) that detects the rotating positions of the substrate and the magnet; and a control device (60) that controls an operation of each operation element. The control device controls the rotating mechanism of the substrate holder and/or the magnet holder to swingingly vary the relative angle between an axis of easy magnetization set in the process surface of the substrate and the magnetic field generated by the magnet during the formation of the magnetic thin film by sputtering, based on a detection signal from the rotational position sensor.
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