| 摘要 |
A process for manufacturing a semiconductor device includes preparing a semiconductor substrate including an N-type region and a P-type region isolated by an isolation region, forming a gate insulating film including an Hf-containing high-dielectric insulating film at least in an uppermost surface over the semiconductor substrate, forming a silicon layer over the gate insulating film, implanting a dopant into only any one of silicon layers over the P-type region and the N-type region, processing the silicon layers to form a gate pattern including a silicon region extending from a region over the N-type region through a region over the isolation region to a region over the P-type region, forming a gate sidewall on a sidewall of the gate pattern, implanting a dopant into the semiconductor substrate using the gate pattern and the gate sidewall as a mask, activating the dopant in the silicon region and the semiconductor substrate by heating, forming an interlayer insulating film over the gate pattern, removing the interlayer insulating film to expose the gate pattern, and depositing a silicide-formable metal M layer over the exposed gate pattern.
|
