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发明名称
A METHOD FOR FABRICATING A DUAL-ORIENTATION GROUP-IV SEMICONDUCTOR SUBSTRATE
摘要
申请公布号
EP2238615(B1)
申请公布日期
2011.08.24
申请号
EP20090705119
申请日期
2009.01.20
申请人
NXP B.V.;ST MICROELECTRONICS SAS
发明人
BIDAL, GREGORY, F.;PAYET, FABRICE, A.;LOUBET, NICOLAS
分类号
H01L21/8238;H01L21/8234
主分类号
H01L21/8238
代理机构
代理人
主权项
地址
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