Semiconductor device with copper wirings

摘要

A semiconductor device comprising: a silicon substrate (11) having an n-type region; a gate insulating film (13) formed on the n-type region, using nitrogen-containing silicon oxide; a gate electrode (14) formed on said gate insulating film, said gate electrode comprising boron-containing silicon; p-type source/drain regions (18) formed in a surface layer of said silicon substrate on both sides of said gate electrode; side wall spacers formed on side walls of said gate electrode, said side wall spacer comprising a lamination of a silicon oxide layer (16) and a silicon nitride layer (15); an interlayer insulating film (24,25) having a planarized surface and covering said gate electrode and side wall spacers; a wiring trench formed in said interlayer insulating film from the planarized surface to an inside thereof; and a copper wiring pattern (27) including an underlying barrier layer (26) of Ta or Ti and an upper level copper region, said copper wiring pattern being filled in said wiring trench.