| 摘要 |
753,140. Semi-conductor devices. STANDARD TELEPHONES & CABLES, Ltd. Jan. 15, 1954 [July 22, 1953], No. 1250/54. Divided out of 753,133. Drawings to Specification. Class 37. The P-type region in a PN junction is provided by diffusing gold, to act as the acceptor impurity, into the semi-conductor. The description is similar to that contained in Specification 753,133 relating to the use of gold for providing a P-layer in a junction type of transistor or rectifier. In addition, the Complete Specification refers to a method of diffusing gold into germanium, suitable for manufacturing diode rectifiers and photo-electric devices as described in Specifications 753,135 and 753,136, in which gold is deposited on a thin plane slice of single crystal by vacuum evaporation heated to 850‹ C. for two hours in hydrogen, cooled slowly to 450‹ C. (the annealing temperature) and maintained at this temperature for 48 hours. Part of the upper and lower surface is then ground away, and the device plated in a fluoride Sn-Ni bath as described in Specification 753,131. After tinning, the slice is cut into small squares and the edges etched. The invention is distinguished from that described in Specification 686,907, [Group XXXIX], in which P-type material is produced by heat, used for diffusing gold into the material. Specification 700,231 also is referred to. |
