发明名称 THERMOELECTRIC DEVICE AND METHOD OF FORMING THE SAME, TEMPERATURE SENSING SENSOR, AND HEAT-SOURCE IMAGE SENSOR USING THE SAME
摘要 Provided are a thermoelectric device and a method of forming the same, a temperature sensing sensor, and a heat-source image sensor using the same. The thermoelectric device includes a first nanowire and a second nanowire, a first silicon thin film, a second silicon thin film, and a third silicon thin film. The first nanowire and a second nanowire are disposed on a substrate. The first nanowire and the second nanowire are separated from each other. The first silicon thin film is connected to one end of the first nanowire. The second silicon thin film is connected to one end of the second nanowire. The third silicon thin film is connected to the other ends of the first nanowire and the second nanowire. The first and second nanowires extend in a direction parallel to an upper surface of the substrate.
申请公布号 US2011198498(A1) 申请公布日期 2011.08.18
申请号 US20110987459 申请日期 2011.01.10
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 PARK YOUNG SAM;JANG MOON GYU;HYUN YOUNGHOON;JUN MYUNGSIM;CHEON SANG HOON;ZYUNG TAEHYOUNG
分类号 H01L23/34;B82Y99/00;G01K7/04;H01J31/49;H01L21/02 主分类号 H01L23/34
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