| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrostatic chuck device capable of adjustment of a temporal change in temperature accompanied by plasma application, temperature adjustment over a wide range, and local temperature control of a platelike specimen by causing a local temperature distribution in a plane of the platelike specimen such as a silicon wafer when applied in a processing apparatus such as a plasma etching device. SOLUTION: The electrostatic chuck device 1 includes an electrostatic chuck part 2 having one of principal planes as a mounting surface for mounting the platelike specimen W and also incorporating an electrostatic attraction internal electrode 13, a temperature adjustment base part 3 for adjusting the electrostatic chuck part 2 to a desired temperature, and an insulative organic film 4 provided between the electrostatic chuck part 2 and the temperature adjustment base part 3, and controls the temperature distribution on the mounting surface by adjusting a position and a thickness of the insulative organic film 4 in a plane. COPYRIGHT: (C)2011,JPO&INPIT |
