ELECTRONIC DEVICE INCLUDING DOPED REGIONS BETWEEN CHANNEL AND DRAIN REGIONS AND A PROCESS OF FORMING THE SAME

摘要

PURPOSE: An electronic device including doping areas between a channel and a drain area and a manufacturing method thereof are provided to reduce injection blocking possibility from a sacrificial member on a sacrificial spacer by reflowing the sacrificial member. CONSTITUTION: A drain area of a transistor(12) has a first conductive type. A channel area of the transistor has a second conductive type which is opposite to the first conductive type. A doping area is extended from the drain area to the channel area. A second doping area is arranged between the first doping area and the channel area. A gate electrode of the transistor is combined with control terminals(162,164) of a control unit(16).