发明名称 Method of determining characteristics of a transistor in an integrated circuit
摘要 <p>A microscopic metallic structure is produced by creating or exposing a patterned region of increased conductivity and then forming a conductor on the region using electrodeposition. In some embodiments, a microscopic metallic structure is formed on a substrate, and then the substrate is etched to remove the structure from the substrate. In some embodiments, a focused beam of gallium ion without a deposition precursor gas scans a pattern on a silicon substrate, to produce a conductive pattern on which a copper structure is then formed by electrochemical deposition of one or more metals. The structure can be freed from the substrate by etching, or can used in place. A beam can be used to access an active layer of a transistor, and then a conductor can be electrodeposited to provide a lead for sensing or modifying the transistor operation while it is functioning. </p>
申请公布号 EP2151859(A3) 申请公布日期 2011.08.17
申请号 EP20090167312 申请日期 2009.08.06
申请人 FEI COMPANY 发明人 HOLTERMANN, THERESA;GRAUPERA, ANTHONY;DIBATTISTA, MICHAEL
分类号 H01L21/66;H01L21/288 主分类号 H01L21/66
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