METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the damage of an element isolation film and an active area in a wet etching process for eliminating a hard mask layer to form a stack gate in a peripheral circuit. CONSTITUTION: A part of a cell area is exposed on a semiconductor board(100). A peripheral circuit area forms a hard mask layer(130) with different etching selectivity ratio from the semiconductor board. A trench for a gate(140) is formed by etching the exposed part of a cell area using a hard mask layer. A gate electrode(150) is formed on the bottom of the trench for the gate. A capping layer(155) is formed in the trench for the gate on the gate electrode. A sealing layer(160) is formed through the entire surface of the board. The semiconductor board is exposed by etching the sealing layer and the hard mask layer in the peripheral circuit area using a material which has different etching selectivity from the semiconductor board.