| 摘要 |
The present invention discloses a semiconductor device package structure with redistribution layer (RDL) and through silicon via (TSV) techniques. The package structure comprises an electronic element which includes an dielectric layer on a backside surface of the electronic element, a plurality of first conductive through vias across through the electronic element and the dielectric layer, and a plurality of conductive pads accompanying with the first conductive through vias on an active surface of the electronic element; a filler material disposed adjacent to the electronic element; a first redistribution layer disposed over the dielectric layer and the filler material, and connected to the first conductive through vias; a first protective layer disposed over the active surface of the electronic element, the conductive pads, and the filler material; and a second protective layer disposed over the redistribution layer, the dielectric layer, and the filler material.
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