| 摘要 |
<p>A film thickness configuration for a triple-junction photovoltaic device that is suitable for obtaining high conversion efficiency. The photovoltaic device (100) comprises, on top of a substrate (1), a transparent electrode layer (2), a photovoltaic layer (3) containing three stacked cell layers (91, 92, 93) having pin junctions, and a back electrode layer (4), wherein an incident section cell layer (91) provided on the light-incident side has an amorphous silicon i-layer having a thickness of not less than 100 nm and not more than 200 nm, a bottom section cell layer (93) provided on the opposite side from the light-incident side has a crystalline silicon-germanium i-layer having a thickness of not less than 700 nm and not more than 1,600 nm, and the ratio of germanium atoms relative to the sum of germanium atoms and silicon atoms within the crystalline silicon-germanium i-layer is not less than 15 atomic% and not more than 25 atomic%, and a middle section cell layer (92) provided between the incident section cell layer (91) and the bottom section cell layer (93) has a crystalline silicon i-layer having a thickness of not less than 1,000 nm and not more than 2,000 nm.</p> |
