发明名称 |
Metal gate transistor and resistor and method for fabricating the same |
摘要 |
A method for fabricating metal gate transistor and resistor is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation in the substrate of the resistor region; forming a tank in the shallow trench isolation of the resistor region; forming at least one gate in the transistor region and a resistor in the tank of the resistor region; and transforming the gate into a metal gate transistor.
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申请公布号 |
US7994576(B2) |
申请公布日期 |
2011.08.09 |
申请号 |
US20090488592 |
申请日期 |
2009.06.22 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
TSENG CHIH-YU;LIN CHIEN-TING;TSENG KUN-SZU;FAN CHENG-WEN;LIANG VICTOR-CHIANG |
分类号 |
H01L27/01;H01L23/62;H01L27/12;H01L29/76;H01L31/0392 |
主分类号 |
H01L27/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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