发明名称 Semiconductor memory circuit
摘要 The present invention provides a semiconductor memory circuit capable of reducing current consumption at non-operation in a system equipped with a plurality of chips that share the use of a power supply, address signals and a data bus. The semiconductor memory circuit has an internal circuit which is capable of selectively performing the supply and stop of an operating voltage via switch means and includes a memory array. An input circuit, which receives a predetermined control signal therein, controls the supply and stop of the operating voltage by the switch means to reduce a DC current and a leak current when no memory operation is done, whereby low power consumption can be realized.
申请公布号 US7995417(B2) 申请公布日期 2011.08.09
申请号 US20100923338 申请日期 2010.09.15
申请人 RENESAS ELECTRONICS CORPORATION;HITACHI DEVICE ENGINEERING CO., LTD. 发明人 AKIBA TAKESADA;UEDA SHIGELD;TACHIBANA TOSHIKAZU;HORIGUCHI MASASHI
分类号 G11C5/14;G11C11/407;G11C8/00;G11C11/401;G11C11/403;G11C11/406;G11C11/4074;G11C11/409;G11C29/08 主分类号 G11C5/14
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