摘要 |
<p>Process of selective trapping of silicon tetrafluoride comprises: introducing a gas stream comprising 60-75% of nitrogen (N 2), 20-35% of hydrogen (H 2), 1.5-4% of silane (SiH 4) and 100 ppm of 0.3% of silicon tetrafluoride (SiF4), in a trapping reactor (40) containing a metal fluoride which does not react with SiF 4, where the metal fluoride is a solid adsorbent (A). Process of selective trapping of silicon tetrafluoride comprises: introducing a gas stream comprising 60-75% of nitrogen (N 2), 20-35% of hydrogen (H 2), 1.5-4% of silane (SiH 4) and 100 ppm of 0.3% of silicon tetrafluoride (SiF4), in a trapping reactor (40) containing a metal fluoride which does not react with SiF 4, where the metal fluoride is a solid adsorbent of formula (nF 2/nM) (A). M : an alkali metal comprising Li, Na, K, Rb, Cs or Fr (when n is 2 ) or an alkaline earth metal comprising Be, Mg, Ca, Sr, Ba or Ra (when n is 1). An independent claim is included for process-I for recycling SiH 4and H 2comprising: (a) injecting a pure SiH 4/H 2mixture in a reaction chamber (7) to produce thin films containing silicon; (b) extracting the mixture using a pump (8) having N 2as supply gas; (c) discharging a mixture comprising SiH 4, H 2, SiF 4and a non-zero amount of nitrogen from the pump (8) at a pressure close to atmospheric pressure; and (d) separating SiF 4from mixture of SiH 4/H 2/N 2from step (c), where at least 50%, preferably 80% of SiH 4from step (b) is reused after step (d) for a further step (a).</p> |