| 摘要 |
PROBLEM TO BE SOLVED: To improve the efficiency of manufacture, and also facilitate a proper protection of an internal circuit. SOLUTION: The heavily doped regions 121SH, 120DH, 122SH of an ESD protective element 101 are not formed in the lower parts of gate electrodes 111G, 112G but formed so as to be positioned on the sides of the gate electrodes 111G, 112G at least via lightly doped regions 121SL, 121DL, 122DL, 122SL on the surface (a xy surface) of a semiconductor substrate 100. The heavily doped regions 121SH, 120DH, 122SH are formed to positions deeper than the lightly doped regions 121SL, 121DL, 122DL, 122SL and impurity regions 121SM, 120DM, 122SM. COPYRIGHT: (C)2011,JPO&INPIT
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