| 摘要 |
A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A semiconductor substrate is prepared. The semiconductor substrate has a first region and a second region other than the first region. A first mask is formed over the first region. The first mask has a first line-and-space pattern extending in a first direction. A first removing process is performed. The first removing process selectively removes the first region with the first mask to form a first groove extending in the first direction. The first removing process removes an upper part of the second region while a remaining part of the second region having a first surface facing upward. The bottom level of the first groove is higher than the level of the first surface.
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